1 ELM34802AA-N general description features maximum absolute ratings thermal characteristics parameter symbol typ. max. unit note maximum junction-to-ambient steady-state rja 62.5 c /w parameter symbol limit unit note drain-source voltage vds 30 v gate-source voltage vgs 20 v continuous drain current ta=25c id 4.5 a ta=70c 3.6 pulsed drain current idm 20 a 3 power dissipation ta=25c pd 2.0 w ta=70c 1.3 junction and storage temperature range tj, tstg -55 to 150 c ELM34802AA-N uses advanced trench technology to provide excellent rds(on), low gate charge and low gate resistance. ? vds=30v ? id=4.5a ? rds(on) < 68m (vgs=10v) ? rds(on) < 98m (vgs=5v) dual n-channel mosfet s 1 d1 s 2 d2 g2 g1 4 - pin configuration circuit pin no. pin name 1 source1 2 gate1 3 source2 4 gate2 5 drain2 6 drain2 7 drain1 8 drain1 4 3 2 1 5 6 7 8 sop-8(top view)
2 ELM34802AA-N electrical characteristics parameter symbol condition min. typ. max. unit note static parameters drain-source breakdown voltage bvdss id=250a, vgs=0v 30 v zero gate voltage drain current idss vds=24v, vgs= 0v 1 a vds=20v, vgs= 0v, tj=55c 10 gate-body leakage current igss vds=0v, vgs= 20v 100 na gate threshold voltage vgs(th) vds=vgs, id=250 a 1.0 1.5 3.0 v on state drain current id(on) vgs=10v, vds=5v 20 a 1 static drain-source on-resistance rds(on) vgs=10v, id= 4.5a 55 68 m 1 vgs = 5v, id =3.5 a 75 98 m forward transconductance gfs vds = 5v, id =4.5 a 4.5 s 1 diode forward voltage vsd if = 1a, vgs=0v 1.2 v 1 dynamic parameters input capacitance ciss vgs=0v, vds=15v, f=1mhz 200 240 pf output capacitance coss 40 55 pf reverse transfer capacitance crss 20 30 pf switching parameters total gate charge qg vgs=10v, vds=15v, id=4.5a 6.5 8.5 nc 2 gate-source charge qgs 1.2 1.8 nc 2 gate-drain charge qgd 1.6 2.4 nc 2 turn - on delay time td(on) vgs=10v, vds=15v, id1a rl=15, rgen=6 7 11 ns 2 turn - on rise time tr 12 18 ns 2 turn - off delay time td(off) 12 18 ns 2 turn - off fall time tf 7 11 ns 2 body diode reverse recovery time trr if = 1a, dl/dt=100a/ s 40 80 ns note : 1. pulsed width300sec and duty cycle2%. 2. independent of operating temperature. 3. pulsed width limited by maximum junction temperature. 4. duty cycle 1%. ta=25 c 4 - dual n-channel mosfet
3 typical electrical and thermal characteristics ELM34802AA-N 4 - dual n-channel mosfet 3 may-10-2006 dual n-channel enhancement mode field effect transistor p6803hvg sop-8 lead-free niko-sem 10 8 6 4 2 0 0 1 2 3 4 v gs = 10v 6.0v 4.5v 4.0v 3.5v 3.0v on-region characteristics. i d , drain-source current(a) v ds , drain-source voltage(v) 0.275 0.225 0.125 0.175 0.075 0.025 2 4 6 8 10 v gs , gate to source voltage(v) r ds(on) , on-resistance(ohm) on-resistance variation with gate-to-source voltage. t a = 125 c t a = 25 c i d =3a 0 2 4 6 8 10 6 5 4 3 2 1 v gs , gate to source voltage(v) i d , drain current(a) v ds = 5v t a = -55 c 125 c 25 c transfer characteristics. 10 1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , body diode forword voltage(v) i s , reverse drain current (a) v gs = 0v t a = 125 c 25c -55 c body diode forword voltage variation with source current and temperature. 0.8 1.2 1 1.6 1.4 0.6 -50 -25 0 25 50 75 100 125 150 t j , junction temperature(c) r ds(on) , normalized drain-source on-resistance v gs = 10v on-resistance variation with temperature. i d = 4.5a 2 1.8 1.6 1.4 1.2 1 0.8 0 2 4 6 8 10 v gs = 4.0v 4.5v 5.0v 6.0v 7.0v 10v i d , drain current(a) r ds(on) , noemalized drain-source on-resistance on-resistance variation with drain current and gate voltage.
4 ELM34802AA-N 4 - dual n-channel mosfet 4 may-10-2006 dual n-channel enhancement mode field effect transistor p6803hvg sop-8 lead-free niko-sem 10 8 6 4 2 0 0 1 2 3 4 5 7 6 10v 15v v ds = 5v v gs (voltage) q g (nc) gate-charge characteristics i d = 4.5a 400 300 200 100 0 0 5 10 15 20 25 30 capacitance(pf) c rss c oss c iss capacitance characteristics v ds ,drain to source voltage(v) 0.1 0.3 1 3 10 30 50 v ds , drain-source voltage(v) 0.03 0.1 0.3 1 3 10 30 i d , drain current(a) v gs = 10v t a =25c r d s ( o n ) l i m i t maximum safe operating area. 1 0 0 u s 1 m s 1 0 m s 1 0 0 m s 1 s d c 0.01 single pulse r ? ja =125c/w single pulse maximum power dissipation. 5 4 3 2 1 0 0.01 0.1 1 10 100 300 power(w) single pulse time(sec) v gs = 10v single pulse t a =25c r ? ja =125c/w 1 0.5 0.2 0.1 0.05 0.02 0.01 0.0001 0.001 0.01 0.1 1 10 100 300 p(pk) t1 t2 t j -t a =p*r ? ja (t) duty cycle, d= t 1 / t 2 r ? ja (t) = r(t) * r ??? t1 time(sec) r(t), normalized effective transient thermal resistance transient thermal response curve. d=0.5 0.2 0.1 0.05 0.02 0.01 single pulse r ? ja =125c/w
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